Show Hamamatsu Avalanche Photo Diode 1911021099
This is all the information about APD 1911021099. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1911021099 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1911021099/2809031534 |
| Unit: |
#1491 (barcode 1309014385) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
H08 |
| Break-through voltage: |
407 V |
| Voltage for Gain 100 (T=+25°C): |
378.7 V |
| Dark current: |
16.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
239 |
| Position in Box: |
3 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10275 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 380.0380342 V T = -25 °C: 344.7541488 V |
| Voltage for Gain 150: |
T = +20 °C: 387.8616038 V T = -25 °C: 352.1000479 V |
| Voltage for Gain 200: |
T = +20 °C: 392.2116134 V T = -25 °C: 356.2384224 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.614684382 V-1 T = -25 °C: 5.037971202 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.130108638 V-1 T = -25 °C: 9.388673086 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.22570273 V-1 T = -25 °C: 14.82588105 V-1 |
| Break-through voltage: |
T = +20 °C: 404.7637009 V T = -25 °C: 370.4622966 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history