Show Hamamatsu Avalanche Photo Diode 1910021065
This is all the information about APD 1910021065. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1910021065 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2206024071/1910021065 |
| Unit: |
#991 (barcode 1309010929) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
H06 |
| Break-through voltage: |
408 V |
| Voltage for Gain 100 (T=+25°C): |
379.1 V |
| Dark current: |
8.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
237 |
| Position in Box: |
29 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10273 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 379.5566209 V T = -25 °C: 344.3836578 V |
| Voltage for Gain 150: |
T = +20 °C: 387.4299211 V T = -25 °C: 351.7195328 V |
| Voltage for Gain 200: |
T = +20 °C: 391.7957507 V T = -25 °C: 355.8418813 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.394412908 V-1 T = -25 °C: 4.824564198 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.53480993 V-1 T = -25 °C: 9.739300385 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.69695212 V-1 T = -25 °C: 15.50384562 V-1 |
| Break-through voltage: |
T = +20 °C: 407.2859424 V T = -25 °C: 371.2100559 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history