Show Hamamatsu Avalanche Photo Diode 1910021039
This is all the information about APD 1910021039. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1910021039 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1910021039/2310024950 |
| Unit: |
#989 (barcode 1309010943) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
H08 |
| Break-through voltage: |
409 V |
| Voltage for Gain 100 (T=+25°C): |
380.1 V |
| Dark current: |
14.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
237 |
| Position in Box: |
43 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10273 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 380.6766184 V T = -25 °C: 345.2247944 V |
| Voltage for Gain 150: |
T = +20 °C: 388.5248883 V T = -25 °C: 352.5925331 V |
| Voltage for Gain 200: |
T = +20 °C: 392.8712522 V T = -25 °C: 356.7232695 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.389303353 V-1 T = -25 °C: 4.844413607 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.51703135 V-1 T = -25 °C: 9.897001035 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.77328578 V-1 T = -25 °C: 15.80535357 V-1 |
| Break-through voltage: |
T = +20 °C: 408.4160094 V T = -25 °C: 372.062669 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history