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Show Hamamatsu Avalanche Photo Diode 1905020592


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Subdetector specification:  
Serial: 1905020592
Type: Hamamatsu Avalanche Photo Diode
Detector: assigned to 2907032919/1905020592
Unit: #2283 (barcode 1309024735)
Preamp: 0
Current location: Bochum
   
Installation information:  
Label: red
   
Manufacturer information:  
Wafer position: A10
Break-through voltage: 407 V
Voltage for Gain 100 (T=+25°C): 379.8 V
Dark current: 21 nA
   
Screening Logistics:  
Available: No
Storage Box: 210
Position in Box: 41
EP1 batch: none
EP1 batch after irradiation: 10481
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 374.4964881 V     T = -25 °C: 344.2645679 V
Voltage for Gain 150: T = +20 °C: 383.5815651 V     T = -25 °C: 351.6618328 V
Voltage for Gain 200: T = +20 °C: 388.7097488 V     T = -25 °C: 355.8086622 V
Gain/Voltage slope at M = 100: T = +20 °C: 3.912078347 V-1     T = -25 °C: 4.858077961 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 7.384089782 V-1     T = -25 °C: 9.836710192 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 12.90274339 V-1     T = -25 °C: 15.65481727 V-1
Break-through voltage: T = +20 °C: 402.4455135 V     T = -25 °C: 370.1539461 V
   
Notes:


Characteristics

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Version history

Time Author Change comment
17. Jun 2021 19:46:13 CEST oafedulidis Assigned to capsule by script
15. Apr 2021 17:01:05 CEST jreher Updated box and position via API.
05. Feb 2021 11:15:25 CET jreher Updated box and position via API.
11. Aug 2020 18:08:43 CEST jreher Updated APD characteristics via API.
21. Jul 2020 14:26:02 CEST jreher Updated APD location via API.
29. Jun 2020 16:08:02 CEST jreher Updated APD batch assignment via API.
23. Jun 2016 11:48:52 CEST Tobias Imported from Hamamatsu datasheet.