Show Hamamatsu Avalanche Photo Diode 1804020241
This is all the information about APD 1804020241. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1804020241 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Bochum |
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| Installation information: |
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| Label: |
none |
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|
| Manufacturer information: |
|
| Wafer position: |
E02 |
| Break-through voltage: |
427 V |
| Voltage for Gain 100 (T=+25°C): |
398.1 V |
| Dark current: |
5.4 nA |
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|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
none |
| Position in Box: |
none |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10669 |
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| Shipment: |
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| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
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|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
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|
| Annealing: |
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| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 399.1894874 V T = -25 °C: 362.5197025 V |
| Voltage for Gain 150: |
T = +20 °C: 407.1529234 V T = -25 °C: 370.3443033 V |
| Voltage for Gain 200: |
T = +20 °C: 411.5827657 V T = -25 °C: 374.6908221 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.44767005 V-1 T = -25 °C: 4.559253568 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.678424022 V-1 T = -25 °C: 8.593630454 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.03776466 V-1 T = -25 °C: 15.20032217 V-1 |
| Break-through voltage: |
T = +20 °C: 426.7515567 V T = -25 °C: 390.3001544 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history