PANDA FEMC Production Database

Show Hamamatsu Avalanche Photo Diode 1804020238

This is all the information about APD 1804020238. If it is wrong, edit the data.

Subdetector specification:
Serial:	1804020238
Type:	Hamamatsu Avalanche Photo Diode
Detector:	unassigned
Unit:	unassigned
Preamp:	0
Current location:	In transit to Bochum

Installation information:
Label:	none

Manufacturer information:
Wafer position:	B04
Break-through voltage:	424 V
Voltage for Gain 100 (T=+25°C):	396.6 V
Dark current:	4.9 nA

Screening Logistics:
Available:	Yes
Storage Box:	none
Position in Box:	none
EP1 batch:	none
EP1 batch after irradiation:	10669

Shipment:
Grid number:	none
Position in grid:	none
Arrival for irradiation:	none
Sent for analysis after irradiation:	none
Return for assembly:	none

Irradiation:
Date:	none
Dose used:	none
Temperature:	none
Position:	none
Bias voltage:	none

Annealing:
Date:	none
Temperature:	none
Duration:	none

Measurement results:
Voltage for Gain 100:	T = +20 °C: 397.0552351 V T = -25 °C: 360.4603883 V
Voltage for Gain 150:	T = +20 °C: 404.926199 V T = -25 °C: 368.2050833 V
Voltage for Gain 200:	T = +20 °C: 409.2934417 V T = -25 °C: 372.5077449 V
Gain/Voltage slope at M = 100:	T = +20 °C: 4.577127482 V^-1 T = -25 °C: 4.643416318 V^-1
Gain/Voltage slope at M = 150:	T = +20 °C: 9.027535327 V^-1 T = -25 °C: 8.813320072 V^-1
Gain/Voltage slope at M = 200:	T = +20 °C: 14.03173636 V^-1 T = -25 °C: 15.56660239 V^-1
Break-through voltage:	T = +20 °C: 423.0382286 V T = -25 °C: 387.9074417 V

Notes:

Temperature	Measurement	Notes
No characteristics available!

Upload time	Notes
No data available!

Time	Author	Change comment
16. Apr 2021 22:10:01 CEST	jreher	Updated APD characteristics via API.
30. Mar 2021 15:07:20 CEST	jreher	Updated APD batch assignment via API.
03. Feb 2021 18:07:39 CET	jreher	Updated APD location via API.
23. Jun 2016 11:48:44 CEST	Tobias	Imported from Hamamatsu datasheet.