Show Hamamatsu Avalanche Photo Diode 1803020169
This is all the information about APD 1803020169. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1803020169 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C05 |
| Break-through voltage: |
423 V |
| Voltage for Gain 100 (T=+25°C): |
394.5 V |
| Dark current: |
4.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
189 |
| Position in Box: |
43 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10145 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
18. Apr 2019 |
| Sent for analysis after irradiation: |
29. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
25. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
27. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 394.8361528 V T = -25 °C: 358.3728091 V |
| Voltage for Gain 150: |
T = +20 °C: 402.7133592 V T = -25 °C: 366.1383972 V |
| Voltage for Gain 200: |
T = +20 °C: 407.0833843 V T = -25 °C: 370.4919886 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.660127823 V-1 T = -25 °C: 4.574951401 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.218660843 V-1 T = -25 °C: 8.906193887 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.44261665 V-1 T = -25 °C: 15.64827787 V-1 |
| Break-through voltage: |
T = +20 °C: 423.0105285 V T = -25 °C: 386.7411087 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history