Show Hamamatsu Avalanche Photo Diode 1801020008
This is all the information about APD 1801020008. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1801020008 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G08 |
| Break-through voltage: |
422 V |
| Voltage for Gain 100 (T=+25°C): |
393.7 V |
| Dark current: |
4.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
241 |
| Position in Box: |
17 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10496 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 394.440086 V T = -25 °C: 358.0283172 V |
| Voltage for Gain 150: |
T = +20 °C: 402.250409 V T = -25 °C: 365.7205779 V |
| Voltage for Gain 200: |
T = +20 °C: 406.5843529 V T = -25 °C: 370.0098004 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.467014224 V-1 T = -25 °C: 4.698711129 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.797822875 V-1 T = -25 °C: 9.361544654 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.37369412 V-1 T = -25 °C: 14.64364261 V-1 |
| Break-through voltage: |
T = +20 °C: 421.749363 V T = -25 °C: 385.7371866 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
