Show Hamamatsu Avalanche Photo Diode 1720019965
This is all the information about APD 1720019965. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1720019965 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
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|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D09 |
| Break-through voltage: |
425 V |
| Voltage for Gain 100 (T=+25°C): |
396.1 V |
| Dark current: |
4.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
401 |
| Position in Box: |
12 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
none |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
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|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 396.717919 V T = -25 °C: 361.0642814 V |
| Voltage for Gain 150: |
T = +20 °C: 404.6773845 V T = -25 °C: 368.5047827 V |
| Voltage for Gain 200: |
T = +20 °C: 409.0865578 V T = -25 °C: 373.123858 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.597021723 V-1 T = -25 °C: 4.654340381 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.107004706 V-1 T = -25 °C: 12.13741252 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.23978951 V-1 T = -25 °C: 17.2606854 V-1 |
| Break-through voltage: |
T = +20 °C: 424.7924796 V T = -25 °C: 388.7344399 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
