Show Hamamatsu Avalanche Photo Diode 1720019937
This is all the information about APD 1720019937. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1720019937 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
C13 |
Break-through voltage: |
427 V |
Voltage for Gain 100 (T=+25°C): |
399.3 V |
Dark current: |
4.1 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
275 |
Position in Box: |
43 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10495 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 399.6440875 V T = -25 °C: 363.0594218 V |
Voltage for Gain 150: |
T = +20 °C: 407.5358993 V T = -25 °C: 370.8149103 V |
Voltage for Gain 200: |
T = +20 °C: 411.9098728 V T = -25 °C: 375.145718 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.634335969 V-1 T = -25 °C: 4.595899779 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.215717134 V-1 T = -25 °C: 9.076124609 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.35233423 V-1 T = -25 °C: 14.14940967 V-1 |
Break-through voltage: |
T = +20 °C: 427.2489383 V T = -25 °C: 390.9598322 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history