Show Hamamatsu Avalanche Photo Diode 1720019902
This is all the information about APD 1720019902. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1720019902 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B06 |
| Break-through voltage: |
425 V |
| Voltage for Gain 100 (T=+25°C): |
396.3 V |
| Dark current: |
4.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
337 |
| Position in Box: |
4 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10509 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 396.629904 V T = -25 °C: 360.1116446 V |
| Voltage for Gain 150: |
T = +20 °C: 404.5573632 V T = -25 °C: 367.8170918 V |
| Voltage for Gain 200: |
T = +20 °C: 408.9342743 V T = -25 °C: 372.1366504 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.349469855 V-1 T = -25 °C: 5.018087736 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.233527897 V-1 T = -25 °C: 9.298935199 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.4305127 V-1 T = -25 °C: 14.47120349 V-1 |
| Break-through voltage: |
T = +20 °C: 424.488659 V T = -25 °C: 388.1265269 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
