Show Hamamatsu Avalanche Photo Diode 1717019653
This is all the information about APD 1717019653. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1717019653 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1704018673/1717019653 |
| Unit: |
#3785 (barcode 1309039746) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B05 |
| Break-through voltage: |
421 V |
| Voltage for Gain 100 (T=+25°C): |
394 V |
| Dark current: |
4.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
272 |
| Position in Box: |
49 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10312 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 393.8869148 V T = -25 °C: 357.5035361 V |
| Voltage for Gain 150: |
T = +20 °C: 401.8288908 V T = -25 °C: 365.1834686 V |
| Voltage for Gain 200: |
T = +20 °C: 406.2406832 V T = -25 °C: 369.5032284 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.549999504 V-1 T = -25 °C: 4.548031874 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.986404777 V-1 T = -25 °C: 8.885438278 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.89619705 V-1 T = -25 °C: 15.55181501 V-1 |
| Break-through voltage: |
T = +20 °C: 414.4600201 V T = -25 °C: 384.7559015 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history