Show Hamamatsu Avalanche Photo Diode 1715019510
This is all the information about APD 1715019510. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1715019510 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
D11 |
Break-through voltage: |
423 V |
Voltage for Gain 100 (T=+25°C): |
394.3 V |
Dark current: |
3.6 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
276 |
Position in Box: |
19 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10316 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 395.4053544 V T = -25 °C: 358.7471047 V |
Voltage for Gain 150: |
T = +20 °C: 403.3733723 V T = -25 °C: 366.4775552 V |
Voltage for Gain 200: |
T = +20 °C: 407.7651108 V T = -25 °C: 370.7975842 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.399360264 V-1 T = -25 °C: 4.769353422 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.535163017 V-1 T = -25 °C: 8.585733796 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.7527649 V-1 T = -25 °C: 14.83967395 V-1 |
Break-through voltage: |
T = +20 °C: 422.9771432 V T = -25 °C: 386.4894291 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history