Show Hamamatsu Avalanche Photo Diode 1712019312
This is all the information about APD 1712019312. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1712019312 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D06 |
| Break-through voltage: |
420 V |
| Voltage for Gain 100 (T=+25°C): |
391.1 V |
| Dark current: |
3.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
268 |
| Position in Box: |
15 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10309 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 391.69805 V T = -25 °C: 355.2285982 V |
| Voltage for Gain 150: |
T = +20 °C: 399.6560116 V T = -25 °C: 362.863562 V |
| Voltage for Gain 200: |
T = +20 °C: 404.0748417 V T = -25 °C: 367.1591761 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.326500819 V-1 T = -25 °C: 4.670361411 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.153299501 V-1 T = -25 °C: 9.286201401 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.24128724 V-1 T = -25 °C: 14.4086389 V-1 |
| Break-through voltage: |
T = +20 °C: 419.881399 V T = -25 °C: 383.2449557 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
