Show Hamamatsu Avalanche Photo Diode 1712019279
This is all the information about APD 1712019279. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1712019279 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1612017697/1712019279 |
| Unit: |
#2997 (barcode 1309033027) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D13 |
| Break-through voltage: |
422 V |
| Voltage for Gain 100 (T=+25°C): |
394.2 V |
| Dark current: |
3.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
268 |
| Position in Box: |
23 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10309 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 394.5081748 V T = -25 °C: 358.2061375 V |
| Voltage for Gain 150: |
T = +20 °C: 402.4006706 V T = -25 °C: 365.8937229 V |
| Voltage for Gain 200: |
T = +20 °C: 406.7685626 V T = -25 °C: 370.2090787 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.405362331 V-1 T = -25 °C: 4.661253281 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.576432188 V-1 T = -25 °C: 9.173684291 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.87572146 V-1 T = -25 °C: 14.24891358 V-1 |
| Break-through voltage: |
T = +20 °C: 422.2080688 V T = -25 °C: 385.9807302 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history