Show Hamamatsu Avalanche Photo Diode 1711019214
This is all the information about APD 1711019214. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1711019214 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1708019004/1711019214 |
| Unit: |
#3677 (barcode 1309037940) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F10 |
| Break-through voltage: |
420 V |
| Voltage for Gain 100 (T=+25°C): |
391.8 V |
| Dark current: |
3.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
283 |
| Position in Box: |
16 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10327 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 392.5109152 V T = -25 °C: 356.2804163 V |
| Voltage for Gain 150: |
T = +20 °C: 400.3713208 V T = -25 °C: 363.9368822 V |
| Voltage for Gain 200: |
T = +20 °C: 404.7291336 V T = -25 °C: 368.2262687 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.444218355 V-1 T = -25 °C: 4.645854661 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.657478581 V-1 T = -25 °C: 9.194956295 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.03177362 V-1 T = -25 °C: 14.33675219 V-1 |
| Break-through voltage: |
T = +20 °C: 419.522132 V T = -25 °C: 383.932407 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history