Show Hamamatsu Avalanche Photo Diode 1710019179
This is all the information about APD 1710019179. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1710019179 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C08 |
| Break-through voltage: |
426 V |
| Voltage for Gain 100 (T=+25°C): |
397 V |
| Dark current: |
3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
283 |
| Position in Box: |
36 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10328 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 397.8911947 V T = -25 °C: 361.1067834 V |
| Voltage for Gain 150: |
T = +20 °C: 405.8863486 V T = -25 °C: 368.9364114 V |
| Voltage for Gain 200: |
T = +20 °C: 410.338642 V T = -25 °C: 373.329455 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.522625985 V-1 T = -25 °C: 4.614543614 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.849480959 V-1 T = -25 °C: 8.910277938 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.70486341 V-1 T = -25 °C: 13.81179878 V-1 |
| Break-through voltage: |
T = +20 °C: 425.7474221 V T = -25 °C: 389.1931274 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
