Show Hamamatsu Avalanche Photo Diode 1710019126
This is all the information about APD 1710019126. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1710019126 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D10 |
| Break-through voltage: |
426 V |
| Voltage for Gain 100 (T=+25°C): |
396.7 V |
| Dark current: |
3.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
282 |
| Position in Box: |
36 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10326 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 397.8018618 V T = -25 °C: 361.1736636 V |
| Voltage for Gain 150: |
T = +20 °C: 405.7513691 V T = -25 °C: 368.9624569 V |
| Voltage for Gain 200: |
T = +20 °C: 410.156824 V T = -25 °C: 373.3219656 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.647005449 V-1 T = -25 °C: 4.594620872 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.121465218 V-1 T = -25 °C: 9.053659174 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.20626043 V-1 T = -25 °C: 14.0482744 V-1 |
| Break-through voltage: |
T = +20 °C: 425.5497625 V T = -25 °C: 389.164615 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
