Show Hamamatsu Avalanche Photo Diode 1704018678
This is all the information about APD 1704018678. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1704018678 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
B08 |
Break-through voltage: |
422 V |
Voltage for Gain 100 (T=+25°C): |
393.8 V |
Dark current: |
5.7 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
305 |
Position in Box: |
48 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10377 |
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Shipment: |
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Grid number: |
499 |
Position in grid: |
17 |
Arrival for irradiation: |
30. Oct 2017 |
Sent for analysis after irradiation: |
17. Nov 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
16. Nov 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
4 |
Bias voltage: |
393.8 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 394.0453431 V T = -25 °C: 357.8058509 V |
Voltage for Gain 150: |
T = +20 °C: 401.9483335 V T = -25 °C: 365.5028952 V |
Voltage for Gain 200: |
T = +20 °C: 406.346669 V T = -25 °C: 369.8022431 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.550359171 V-1 T = -25 °C: 4.789075598 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.928907418 V-1 T = -25 °C: 8.630147285 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 13.82618984 V-1 T = -25 °C: 14.97946287 V-1 |
Break-through voltage: |
T = +20 °C: 416.3724117 V T = -25 °C: 385.8217052 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
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Progression of the current during irradiation
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Version history