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Show Hamamatsu Avalanche Photo Diode 1704018674


This is all the information about APD 1704018674. If it is wrong, edit the data.

Subdetector specification:  
Serial: 1704018674
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: unknown
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: H08
Break-through voltage: 416 V
Voltage for Gain 100 (T=+25°C): 390.3 V
Dark current: 4.6 nA
   
Screening Logistics:  
Available: Yes
Storage Box: none
Position in Box: none
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: 499
Position in grid: 13
Arrival for irradiation: 30. Oct 2017
Sent for analysis after irradiation: 17. Nov 2017
Return for assembly: none
   
Irradiation:  
Date: 16. Nov 2017
Dose used: 45 Gy
Temperature: 20 °C
Position: 4
Bias voltage: 390.3 V     (connected)
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 150: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 200: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 100: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 150: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 200: T = +20 °C: none     T = -25 °C: none
Break-through voltage: T = +20 °C: none     T = -25 °C: none
   
Notes:


Characteristics

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Progression of the current during irradiation

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Version history

Time Author Change comment
17. Nov 2017 09:40:11 CET markus.moritz Entered shipped after irradiation date.
17. Nov 2017 09:38:00 CET markus.moritz Entered irradiation information.
09. Nov 2017 15:10:57 CET markus.moritz Entered arrival for irradiation date.
02. Nov 2017 15:16:53 CET Tobias Assigned to grid via information extracted from APD DB.
23. Jun 2016 11:42:17 CEST Tobias Imported from Hamamatsu datasheet.