Show Hamamatsu Avalanche Photo Diode 1704018673
This is all the information about APD 1704018673. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1704018673 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1704018673/1717019653 |
| Unit: |
#3785 (barcode 1309039746) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G08 |
| Break-through voltage: |
422 V |
| Voltage for Gain 100 (T=+25°C): |
393.2 V |
| Dark current: |
5.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
305 |
| Position in Box: |
44 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10377 |
| |
|
| Shipment: |
|
| Grid number: |
499 |
| Position in grid: |
12 |
| Arrival for irradiation: |
30. Oct 2017 |
| Sent for analysis after irradiation: |
17. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
393.2 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 393.8249184 V T = -25 °C: 357.5978891 V |
| Voltage for Gain 150: |
T = +20 °C: 401.7301294 V T = -25 °C: 365.275695 V |
| Voltage for Gain 200: |
T = +20 °C: 406.1103068 V T = -25 °C: 369.5954162 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.65956523 V-1 T = -25 °C: 4.572082743 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.276444873 V-1 T = -25 °C: 8.94388498 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.56268688 V-1 T = -25 °C: 15.8356294 V-1 |
| Break-through voltage: |
T = +20 °C: 415.7394381 V T = -25 °C: 385.4740466 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history