Show Hamamatsu Avalanche Photo Diode 1704018670
This is all the information about APD 1704018670. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1704018670 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1411015864/1704018670 |
| Unit: |
#3752 (barcode 1309039029) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
A09 |
| Break-through voltage: |
418 V |
| Voltage for Gain 100 (T=+25°C): |
392.9 V |
| Dark current: |
6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
305 |
| Position in Box: |
41 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10376 |
| |
|
| Shipment: |
|
| Grid number: |
499 |
| Position in grid: |
9 |
| Arrival for irradiation: |
30. Oct 2017 |
| Sent for analysis after irradiation: |
17. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
392.9 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 392.5824514 V T = -25 °C: 356.5374565 V |
| Voltage for Gain 150: |
T = +20 °C: 400.5407835 V T = -25 °C: 364.2059275 V |
| Voltage for Gain 200: |
T = +20 °C: 404.9436711 V T = -25 °C: 368.5194055 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.359599009 V-1 T = -25 °C: 4.555305604 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.477286771 V-1 T = -25 °C: 9.014899586 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.59313043 V-1 T = -25 °C: 15.79381241 V-1 |
| Break-through voltage: |
T = +20 °C: 411.3256385 V T = -25 °C: 383.5528476 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
