Show Hamamatsu Avalanche Photo Diode 1702018513
This is all the information about APD 1702018513. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1702018513 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
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|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D04 |
| Break-through voltage: |
427 V |
| Voltage for Gain 100 (T=+25°C): |
398.2 V |
| Dark current: |
6.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
399 |
| Position in Box: |
48 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
none |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
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|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 398.703849 V T = -25 °C: 361.9442996 V |
| Voltage for Gain 150: |
T = +20 °C: 406.6682491 V T = -25 °C: 369.7647776 V |
| Voltage for Gain 200: |
T = +20 °C: 411.0689036 V T = -25 °C: 374.1166505 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.30747824 V-1 T = -25 °C: 4.826332515 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.183017917 V-1 T = -25 °C: 9.215066787 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.31282702 V-1 T = -25 °C: 14.27915609 V-1 |
| Break-through voltage: |
T = +20 °C: 426.8947457 V T = -25 °C: 390.2186721 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
