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Show Hamamatsu Avalanche Photo Diode 1603016899 - Archived data from Wed, 21. April 2021 12:57:00 CEST


This is all the information about APD 1603016899. If it is wrong, edit the data.

Subdetector specification:  
Serial: 1603016899
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: unknown
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: D05
Break-through voltage: 417 V
Voltage for Gain 100 (T=+25°C): 388.9 V
Dark current: 6.5 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 324
Position in Box: 42
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 389.4386871 V     T = -25 °C: 354.5838321 V
Voltage for Gain 150: T = +20 °C: 397.3225458 V     T = -25 °C: 364.0780481 V
Voltage for Gain 200: T = +20 °C: 401.6953077 V     T = -25 °C: 368.2772241 V
Gain/Voltage slope at M = 100: T = +20 °C: 4.43099641 V-1     T = -25 °C: 24.41420926 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 8.738454846 V-1     T = -25 °C: 7.843613467 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 15.21691494 V-1     T = -25 °C: 17.07863165 V-1
Break-through voltage: T = +20 °C: 416.989792 V     T = -25 °C: 380.2934031 V
   
Notes:


Version history

Time Author Change comment
21. Apr 2021 12:57:11 CEST jreher Updated APD location via API.
21. Apr 2021 12:57:00 CEST jreher Updated box and position via API.
16. Apr 2021 21:58:08 CEST jreher Updated APD characteristics via API.
06. Oct 2020 19:10:03 CEST jreher Updated APD batch assignment via API.
23. Jun 2016 10:42:21 CEST Tobias Imported from Hamamatsu datasheet.