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Show Hamamatsu Avalanche Photo Diode 1603016897 - Archived data from Wed, 21. April 2021 12:57:00 CEST


This is all the information about APD 1603016897. If it is wrong, edit the data.

Subdetector specification:  
Serial: 1603016897
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: unknown
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: B04
Break-through voltage: 411 V
Voltage for Gain 100 (T=+25°C): 386.6 V
Dark current: 4.9 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 324
Position in Box: 40
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 386.2305136 V     T = -25 °C: 351.8111915 V
Voltage for Gain 150: T = +20 °C: 394.1593245 V     T = -25 °C: 360.637498 V
Voltage for Gain 200: T = +20 °C: 398.5573668 V     T = -25 °C: 363.9571796 V
Gain/Voltage slope at M = 100: T = +20 °C: 4.479224763 V-1     T = -25 °C: 22.47857378 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 8.741319866 V-1     T = -25 °C: 26.75082942 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 15.21420086 V-1     T = -25 °C: 14.44082978 V-1
Break-through voltage: T = +20 °C: 410.6224243 V     T = -25 °C: 376.2897409 V
   
Notes:


Version history

Time Author Change comment
21. Apr 2021 12:57:11 CEST jreher Updated APD location via API.
21. Apr 2021 12:57:00 CEST jreher Updated box and position via API.
16. Apr 2021 21:58:08 CEST jreher Updated APD characteristics via API.
06. Oct 2020 19:10:03 CEST jreher Updated APD batch assignment via API.
23. Jun 2016 10:42:20 CEST Tobias Imported from Hamamatsu datasheet.