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Show Hamamatsu Avalanche Photo Diode 1603016894 - Archived data from Fri, 16. April 2021 21:58:07 CEST


This is all the information about APD 1603016894. If it is wrong, edit the data.

Subdetector specification:  
Serial: 1603016894
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: unknown
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: C05
Break-through voltage: 418 V
Voltage for Gain 100 (T=+25°C): 389.3 V
Dark current: 5.2 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 324
Position in Box: 38
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 389.5952389 V     T = -25 °C: 357.0460122 V
Voltage for Gain 150: T = +20 °C: 397.5438515 V     T = -25 °C: 364.284879 V
Voltage for Gain 200: T = +20 °C: 401.9420665 V     T = -25 °C: 367.4858329 V
Gain/Voltage slope at M = 100: T = +20 °C: 4.388759064 V-1     T = -25 °C: 2.085291423 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 8.47667676 V-1     T = -25 °C: 27.30187651 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 14.6074923 V-1     T = -25 °C: 18.42735898 V-1
Break-through voltage: T = +20 °C: 417.9206395 V     T = -25 °C: 381.1579452 V
   
Notes:


Version history

Time Author Change comment
21. Apr 2021 12:57:11 CEST jreher Updated APD location via API.
21. Apr 2021 12:57:00 CEST jreher Updated box and position via API.
16. Apr 2021 21:58:07 CEST jreher Updated APD characteristics via API.
06. Oct 2020 19:10:03 CEST jreher Updated APD batch assignment via API.
23. Jun 2016 10:42:20 CEST Tobias Imported from Hamamatsu datasheet.