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Show Hamamatsu Avalanche Photo Diode 1602016876 - Archived data from Wed, 21. April 2021 12:56:59 CEST


This is all the information about APD 1602016876. If it is wrong, edit the data.

Subdetector specification:  
Serial: 1602016876
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: unknown
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: F14
Break-through voltage: 420 V
Voltage for Gain 100 (T=+25°C): 393.1 V
Dark current: 5.4 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 324
Position in Box: 31
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 392.9838802 V     T = -25 °C: 356.855702 V
Voltage for Gain 150: T = +20 °C: 400.8670919 V     T = -25 °C: 362.7299179 V
Voltage for Gain 200: T = +20 °C: 405.2406792 V     T = -25 °C: 368.9936457 V
Gain/Voltage slope at M = 100: T = +20 °C: 4.562114861 V-1     T = -25 °C: 16.64686617 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 9.046214261 V-1     T = -25 °C: 24.43677792 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 14.06089989 V-1     T = -25 °C: 23.83852303 V-1
Break-through voltage: T = +20 °C: 417.6301849 V     T = -25 °C: 384.0248035 V
   
Notes:


Version history

Time Author Change comment
21. Apr 2021 12:57:10 CEST jreher Updated APD location via API.
21. Apr 2021 12:56:59 CEST jreher Updated box and position via API.
16. Apr 2021 21:58:06 CEST jreher Updated APD characteristics via API.
06. Oct 2020 19:10:02 CEST jreher Updated APD batch assignment via API.
23. Jun 2016 10:42:20 CEST Tobias Imported from Hamamatsu datasheet.