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Show Hamamatsu Avalanche Photo Diode 1602016870 - Archived data from Fri, 16. April 2021 21:58:05 CEST


This is all the information about APD 1602016870. If it is wrong, edit the data.

Subdetector specification:  
Serial: 1602016870
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: unknown
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: D10
Break-through voltage: 422 V
Voltage for Gain 100 (T=+25°C): 392.7 V
Dark current: 5.2 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 324
Position in Box: 26
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 393.5140447 V     T = -25 °C: 355.6114858 V
Voltage for Gain 150: T = +20 °C: 401.4282924 V     T = -25 °C: 362.7878094 V
Voltage for Gain 200: T = +20 °C: 405.8103798 V     T = -25 °C: 367.9248934 V
Gain/Voltage slope at M = 100: T = +20 °C: 4.416076142 V-1     T = -25 °C: 1.696470686 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 8.633995361 V-1     T = -25 °C: 45.65987773 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 15.11285549 V-1     T = -25 °C: 21.01345071 V-1
Break-through voltage: T = +20 °C: 420.9673252 V     T = -25 °C: 384.4463371 V
   
Notes:


Version history

Time Author Change comment
21. Apr 2021 12:57:09 CEST jreher Updated APD location via API.
21. Apr 2021 12:56:59 CEST jreher Updated box and position via API.
16. Apr 2021 21:58:05 CEST jreher Updated APD characteristics via API.
06. Oct 2020 19:10:02 CEST jreher Updated APD batch assignment via API.
23. Jun 2016 10:42:20 CEST Tobias Imported from Hamamatsu datasheet.