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Show Hamamatsu Avalanche Photo Diode 1602016868 - Archived data from Wed, 21. April 2021 12:56:58 CEST


This is all the information about APD 1602016868. If it is wrong, edit the data.

Subdetector specification:  
Serial: 1602016868
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: unknown
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: F11
Break-through voltage: 425 V
Voltage for Gain 100 (T=+25°C): 396.4 V
Dark current: 6.3 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 324
Position in Box: 24
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 396.5857694 V     T = -25 °C: 357.0834016 V
Voltage for Gain 150: T = +20 °C: 404.4715813 V     T = -25 °C: 367.2749398 V
Voltage for Gain 200: T = +20 °C: 408.8365985 V     T = -25 °C: 371.8904599 V
Gain/Voltage slope at M = 100: T = +20 °C: 4.383861855 V-1     T = -25 °C: 13.41845782 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 8.584960797 V-1     T = -25 °C: 13.09091217 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 14.90393072 V-1     T = -25 °C: 13.28633405 V-1
Break-through voltage: T = +20 °C: 424.4734644 V     T = -25 °C: 388.2040807 V
   
Notes:


Version history

Time Author Change comment
21. Apr 2021 12:57:09 CEST jreher Updated APD location via API.
21. Apr 2021 12:56:58 CEST jreher Updated box and position via API.
16. Apr 2021 21:58:05 CEST jreher Updated APD characteristics via API.
06. Oct 2020 19:10:02 CEST jreher Updated APD batch assignment via API.
23. Jun 2016 10:42:20 CEST Tobias Imported from Hamamatsu datasheet.