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Show Hamamatsu Avalanche Photo Diode 1602016846 - Archived data from Thu, 23. June 2016 10:42:19 CEST


This is all the information about APD 1602016846. If it is wrong, edit the data.

Subdetector specification:  
Serial: 1602016846
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: unknown
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: C08
Break-through voltage: 419 V
Voltage for Gain 100 (T=+25°C): 390.8 V
Dark current: 5.5 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 269
Position in Box: 39
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 150: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 200: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 100: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 150: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 200: T = +20 °C: none     T = -25 °C: none
Break-through voltage: T = +20 °C: none     T = -25 °C: none
   
Notes:


Version history

Time Author Change comment
05. Feb 2021 11:23:02 CET jreher Updated box and position via API.
11. Aug 2020 18:10:01 CEST jreher Updated APD characteristics via API.
21. Jul 2020 14:36:09 CEST jreher Updated APD location via API.
21. Jul 2020 14:35:59 CEST jreher Updated box and position via API.
29. Jun 2020 16:13:10 CEST jreher Updated APD batch assignment via API.
23. Jun 2016 10:42:19 CEST Tobias Imported from Hamamatsu datasheet.