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Show Hamamatsu Avalanche Photo Diode 1602016823 - Archived data from Fri, 29. September 2017 11:31:43 CEST


This is all the information about APD 1602016823. If it is wrong, edit the data.

Subdetector specification:  
Serial: 1602016823
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: unknown
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: D01
Break-through voltage: 414 V
Voltage for Gain 100 (T=+25°C): 385.7 V
Dark current: 6.3 nA
   
Screening Logistics:  
Available: Yes
Storage Box: none
Position in Box: none
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: 431
Position in grid: 4
Arrival for irradiation: 29. Sep 2017
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 150: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 200: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 100: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 150: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 200: T = +20 °C: none     T = -25 °C: none
Break-through voltage: T = +20 °C: none     T = -25 °C: none
   
Notes:


Version history

Time Author Change comment
20. Oct 2017 14:32:01 CEST markus.moritz Entered shipped after irradiation date.
20. Oct 2017 09:52:13 CEST markus.moritz Entered irradiation information.
29. Sep 2017 11:31:43 CEST markus.moritz Entered arrival for irradiation date.
01. Aug 2016 17:29:54 CEST Tobias Assigned to grid via information extracted from APD DB.
23. Jun 2016 10:42:19 CEST Tobias Imported from Hamamatsu datasheet.