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Show Hamamatsu Avalanche Photo Diode 0711006261 - Archived data from Wed, 18. January 2017 16:28:35 CET


This is all the information about APD 0711006261. If it is wrong, edit the data.

Subdetector specification:  
Serial: 0711006261
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: unknown
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: E12
Break-through voltage: 421 V
Voltage for Gain 100 (T=+25°C): 393.1 V
Dark current: 13.5 nA
   
Screening Logistics:  
Available: Yes
Storage Box: none
Position in Box: none
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: 44
Position in grid: 3
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 150: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 200: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 100: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 150: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 200: T = +20 °C: none     T = -25 °C: none
Break-through voltage: T = +20 °C: none     T = -25 °C: none
   
Notes:


Version history

Time Author Change comment
19. Jan 2017 11:05:12 CET tobias Added irradiation/annealing data after fixing PSL S/N issue.
18. Jan 2017 16:28:35 CET Tobias Assigned to grid via information extracted from APD DB.
22. Jun 2016 15:13:07 CEST Tobias Imported from Hamamatsu datasheet.