RUB » Physics » The Faculty » Chairs and Working Groups » EP1 » PANDA FEMC Production Database

Show Hamamatsu Avalanche Photo Diode 0709006151 - Archived data from Sat, 17. April 2021 01:10:05 CEST


This is all the information about APD 0709006151. If it is wrong, edit the data.

Subdetector specification:  
Serial: 0709006151
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: Giessen (mounted in Slice)
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: B09
Break-through voltage: 416 V
Voltage for Gain 100 (T=+25°C): 387.2 V
Dark current: 17.7 nA
   
Screening Logistics:  
Available: Yes
Storage Box: none
Position in Box: none
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 150: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 200: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 100: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 150: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 200: T = +20 °C: none     T = -25 °C: none
Break-through voltage: T = +20 °C: none     T = -25 °C: none
   
Notes:


Version history

Time Author Change comment
17. Apr 2021 01:10:26 CEST jreher Updated APD location via API.
17. Apr 2021 01:10:05 CEST jreher Updated APD location via API.
28. Apr 2014 15:40:36 CEST Tobias Imported from Hamamatsu datasheet.