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Show Hamamatsu Avalanche Photo Diode 1319014945 - Archived data from Thu, 23. June 2016 10:29:50 CEST


This is all the information about APD 1319014945. If it is wrong, edit the data.

Subdetector specification:  
Serial: 1319014945
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: unknown
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: F05
Break-through voltage: 435 V
Voltage for Gain 100 (T=+25°C): 406.1 V
Dark current: 5.4 nA
   
Screening Logistics:  
Available: Yes
Storage Box: none
Position in Box: none
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 150: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 200: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 100: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 150: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 200: T = +20 °C: none     T = -25 °C: none
Break-through voltage: T = +20 °C: none     T = -25 °C: none
   
Notes:


Version history

Time Author Change comment
12. Dec 2017 22:43:24 CET yannik.bettner Entered irradiation information.
02. Nov 2017 15:18:58 CET markus.moritz Entered arrival for irradiation date.
27. Oct 2017 10:23:25 CEST Tobias Resetted arrival for irradiation date as APDs are returned to GSI un-irradiated.
29. Sep 2017 12:33:30 CEST markus.moritz Entered arrival for irradiation date.
01. Aug 2016 17:28:58 CEST Tobias Assigned to grid via information extracted from APD DB.
23. Jun 2016 10:29:50 CEST Tobias Imported from Hamamatsu datasheet.