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Show Hamamatsu Avalanche Photo Diode 2019022696 - Archived data from Thu, 23. June 2016 10:08:04 CEST


This is all the information about APD 2019022696. If it is wrong, edit the data.

Subdetector specification:  
Serial: 2019022696
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: unknown
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: E08
Break-through voltage: 404 V
Voltage for Gain 100 (T=+25°C): 376.5 V
Dark current: 18.9 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 379
Position in Box: 44
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 150: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 200: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 100: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 150: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 200: T = +20 °C: none     T = -25 °C: none
Break-through voltage: T = +20 °C: none     T = -25 °C: none
   
Notes:


Version history

Time Author Change comment
16. Apr 2021 22:03:07 CEST jreher Updated APD characteristics via API.
05. Feb 2021 11:37:00 CET jreher Updated box and position via API.
14. Oct 2020 15:55:09 CEST vwerner Updated APD batch assignment via API.
08. Oct 2020 18:19:51 CEST jreher Updated APD location via API.
23. Jun 2016 10:08:04 CEST Tobias Imported from Hamamatsu datasheet.