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Show Hamamatsu Avalanche Photo Diode 1202012831 - Archived data from Thu, 02. November 2017 15:19:16 CET


This is all the information about APD 1202012831. If it is wrong, edit the data.

Subdetector specification:  
Serial: 1202012831
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: unknown
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: B08
Break-through voltage: 438 V
Voltage for Gain 100 (T=+25°C): 408.7 V
Dark current: 10.2 nA
   
Screening Logistics:  
Available: Yes
Storage Box: none
Position in Box: none
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: 256
Position in grid: 4
Arrival for irradiation: 02. Nov 2017
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 150: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 200: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 100: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 150: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 200: T = +20 °C: none     T = -25 °C: none
Break-through voltage: T = +20 °C: none     T = -25 °C: none
   
Notes:


Version history

Time Author Change comment
23. Nov 2017 11:58:45 CET markus.moritz Entered shipped after irradiation date.
23. Nov 2017 11:56:22 CET markus.moritz Entered irradiation information.
02. Nov 2017 15:19:16 CET markus.moritz Entered arrival for irradiation date.
01. Aug 2016 17:27:54 CEST Tobias Assigned to grid via information extracted from APD DB.
22. Jun 2016 15:37:50 CEST Tobias Imported from Hamamatsu datasheet.