RUB » Physics » The Faculty » Chairs and Working Groups » EP1 » PANDA FEMC Production Database

Show Hamamatsu Avalanche Photo Diode 1202012817 - Archived data from Mon, 01. August 2016 17:27:53 CEST


This is all the information about APD 1202012817. If it is wrong, edit the data.

Subdetector specification:  
Serial: 1202012817
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: unknown
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: H08
Break-through voltage: 433 V
Voltage for Gain 100 (T=+25°C): 405 V
Dark current: 8.7 nA
   
Screening Logistics:  
Available: Yes
Storage Box: none
Position in Box: none
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: 255
Position in grid: 10
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 150: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 200: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 100: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 150: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 200: T = +20 °C: none     T = -25 °C: none
Break-through voltage: T = +20 °C: none     T = -25 °C: none
   
Notes:


Version history

Time Author Change comment
23. Nov 2017 11:58:27 CET markus.moritz Entered shipped after irradiation date.
23. Nov 2017 11:54:44 CET markus.moritz Entered irradiation information.
29. Sep 2017 11:45:42 CEST markus.moritz Entered arrival for irradiation date.
01. Aug 2016 17:27:53 CEST Tobias Assigned to grid via information extracted from APD DB.
22. Jun 2016 15:37:49 CEST Tobias Imported from Hamamatsu datasheet.