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Show Hamamatsu Avalanche Photo Diode 1201012745 - Archived data from Mon, 01. August 2016 17:27:51 CEST


This is all the information about APD 1201012745. If it is wrong, edit the data.

Subdetector specification:  
Serial: 1201012745
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: unknown
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: G10
Break-through voltage: 444 V
Voltage for Gain 100 (T=+25°C): 416 V
Dark current: 9.2 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 334
Position in Box: 18
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: 252
Position in grid: 0
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 150: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 200: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 100: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 150: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 200: T = +20 °C: none     T = -25 °C: none
Break-through voltage: T = +20 °C: none     T = -25 °C: none
   
Notes:


Version history

Time Author Change comment
16. Apr 2021 21:58:26 CEST jreher Updated APD characteristics via API.
05. Feb 2021 11:31:05 CET jreher Updated box and position via API.
07. Oct 2020 15:45:27 CEST jreher Updated APD location via API.
11. Aug 2020 17:53:32 CEST jreher Updated APD location via API.
21. Jul 2020 16:25:51 CEST jreher Updated APD batch assignment via API.
01. Aug 2016 17:27:51 CEST Tobias Assigned to grid via information extracted from APD DB.
22. Jun 2016 15:37:47 CEST Tobias Imported from Hamamatsu datasheet.