RUB » Physics » The Faculty » Chairs and Working Groups » EP1 » PANDA FEMC Production Database

Show Hamamatsu Avalanche Photo Diode 0920010464 - Archived data from Wed, 29. November 2017 09:13:15 CET


This is all the information about APD 0920010464. If it is wrong, edit the data.

Subdetector specification:  
Serial: 0920010464
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: unknown
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: F08
Break-through voltage: 407 V
Voltage for Gain 100 (T=+25°C): 379 V
Dark current: 6.7 nA
   
Screening Logistics:  
Available: Yes
Storage Box: none
Position in Box: none
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: 241
Position in grid: 16
Arrival for irradiation: 30. Oct 2017
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 150: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 200: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 100: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 150: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 200: T = +20 °C: none     T = -25 °C: none
Break-through voltage: T = +20 °C: none     T = -25 °C: none
   
Notes:


Version history

Time Author Change comment
12. Dec 2017 22:40:11 CET yannik.bettner Entered irradiation information.
29. Nov 2017 09:13:15 CET markus.moritz Entered arrival for irradiation date.
27. Nov 2017 15:38:27 CET Tobias Assigned to grid via information extracted from APD DB.
22. Jun 2016 15:36:17 CEST Tobias Imported from Hamamatsu datasheet.