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Show Hamamatsu Avalanche Photo Diode 0918010337 - Archived data from Tue, 11. August 2020 18:10:37 CEST


This is all the information about APD 0918010337. If it is wrong, edit the data.

Subdetector specification:  
Serial: 0918010337
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: Bochum
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: C09
Break-through voltage: 409 V
Voltage for Gain 100 (T=+25°C): 380.6 V
Dark current: 4.3 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 325
Position in Box: 15
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 8.095075242 V     T = -25 °C: 305.8068323 V
Voltage for Gain 150: T = +20 °C: 8.201686199 V     T = -25 °C: 319.9099653 V
Voltage for Gain 200: T = +20 °C: 8.308297157 V     T = -25 °C: 328.7945012 V
Gain/Voltage slope at M = 100: T = +20 °C: 468.9949452 V-1     T = -25 °C: 2.622988822 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 468.9949452 V-1     T = -25 °C: 4.73419008 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 468.9949452 V-1     T = -25 °C: 6.748239007 V-1
Break-through voltage: T = +20 °C: 409.2151563 V     T = -25 °C: 372.7741151 V
   
Notes:


Version history

Time Author Change comment
05. Feb 2021 11:30:01 CET jreher Updated box and position via API.
11. Aug 2020 18:10:37 CEST jreher Updated APD characteristics via API.
11. Aug 2020 17:53:22 CEST jreher Updated APD location via API.
21. Jul 2020 16:16:22 CEST jreher Updated APD batch assignment via API.
22. Jun 2016 15:36:14 CEST Tobias Imported from Hamamatsu datasheet.