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Show Hamamatsu Avalanche Photo Diode 0918010303 - Archived data from Tue, 11. August 2020 18:10:43 CEST


This is all the information about APD 0918010303. If it is wrong, edit the data.

Subdetector specification:  
Serial: 0918010303
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: Bochum
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: E05
Break-through voltage: 410 V
Voltage for Gain 100 (T=+25°C): 381.7 V
Dark current: 4 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 325
Position in Box: 44
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 404.5885765 V     T = -25 °C: 346.145091 V
Voltage for Gain 150: T = +20 °C: 406.3296249 V     T = -25 °C: 353.5634088 V
Voltage for Gain 200: T = +20 °C: 407.2715395 V     T = -25 °C: 357.7188534 V
Gain/Voltage slope at M = 100: T = +20 °C: 19.80252912 V-1     T = -25 °C: 4.865341531 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 48.10192493 V-1     T = -25 °C: 8.899671981 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 75.18203164 V-1     T = -25 °C: 15.70856142 V-1
Break-through voltage: T = +20 °C: 409.7144236 V     T = -25 °C: 372.9098856 V
   
Notes:


Version history

Time Author Change comment
05. Feb 2021 11:30:04 CET jreher Updated box and position via API.
11. Aug 2020 18:10:43 CEST jreher Updated APD characteristics via API.
11. Aug 2020 17:53:24 CEST jreher Updated APD location via API.
21. Jul 2020 16:16:40 CEST jreher Updated APD batch assignment via API.
22. Jun 2016 15:36:13 CEST Tobias Imported from Hamamatsu datasheet.