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Show Hamamatsu Avalanche Photo Diode 0917010284 - Archived data from Tue, 11. August 2020 18:10:39 CEST


This is all the information about APD 0917010284. If it is wrong, edit the data.

Subdetector specification:  
Serial: 0917010284
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: Bochum
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: E04
Break-through voltage: 401 V
Voltage for Gain 100 (T=+25°C): 372.2 V
Dark current: 4 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 325
Position in Box: 25
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 386.0601796 V     T = -25 °C: 298.4770297 V
Voltage for Gain 150: T = +20 °C: 390.4638564 V     T = -25 °C: 312.2131434 V
Voltage for Gain 200: T = +20 °C: 392.8281522 V     T = -25 °C: 320.9382191 V
Gain/Voltage slope at M = 100: T = +20 °C: 7.595300256 V-1     T = -25 °C: 2.76974725 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 16.16251286 V-1     T = -25 °C: 4.709096264 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 29.24391123 V-1     T = -25 °C: 7.0942061 V-1
Break-through voltage: T = +20 °C: 400.4385617 V     T = -25 °C: 364.4616362 V
   
Notes:


Version history

Time Author Change comment
05. Feb 2021 11:30:02 CET jreher Updated box and position via API.
11. Aug 2020 18:10:39 CEST jreher Updated APD characteristics via API.
11. Aug 2020 17:53:23 CEST jreher Updated APD location via API.
21. Jul 2020 16:16:23 CEST jreher Updated APD batch assignment via API.
22. Jun 2016 15:36:13 CEST Tobias Imported from Hamamatsu datasheet.