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Show Hamamatsu Avalanche Photo Diode 0917010275 - Archived data from Tue, 11. August 2020 18:10:37 CEST


This is all the information about APD 0917010275. If it is wrong, edit the data.

Subdetector specification:  
Serial: 0917010275
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: Bochum
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: C02
Break-through voltage: 400 V
Voltage for Gain 100 (T=+25°C): 372.1 V
Dark current: 3.5 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 325
Position in Box: 17
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 375.8989267 V     T = -25 °C: 297.8002914 V
Voltage for Gain 150: T = +20 °C: 382.8593139 V     T = -25 °C: 311.5671995 V
Voltage for Gain 200: T = +20 °C: 386.698876 V     T = -25 °C: 320.2471126 V
Gain/Voltage slope at M = 100: T = +20 °C: 5.18581457 V-1     T = -25 °C: 2.73824399 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 10.18951213 V-1     T = -25 °C: 4.685565584 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 16.89395235 V-1     T = -25 °C: 6.952370304 V-1
Break-through voltage: T = +20 °C: 398.8500455 V     T = -25 °C: 363.6809474 V
   
Notes:


Version history

Time Author Change comment
05. Feb 2021 11:30:01 CET jreher Updated box and position via API.
11. Aug 2020 18:10:37 CEST jreher Updated APD characteristics via API.
11. Aug 2020 17:53:22 CEST jreher Updated APD location via API.
21. Jul 2020 16:16:22 CEST jreher Updated APD batch assignment via API.
22. Jun 2016 15:36:12 CEST Tobias Imported from Hamamatsu datasheet.