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Show Hamamatsu Avalanche Photo Diode 0820008737 - Archived data from Tue, 13. August 2019 14:47:11 CEST


This is all the information about APD 0820008737. If it is wrong, edit the data.

Subdetector specification:  
Serial: 0820008737
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: unknown
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: F08
Break-through voltage: 413 V
Voltage for Gain 100 (T=+25°C): 385.6 V
Dark current: 4.5 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 201
Position in Box: 19
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: 18. Apr 2019
Sent for analysis after irradiation: 29. Jul 2019
Return for assembly: none
   
Irradiation:  
Date: 25. Jul 2019
Dose used: 37 Gy
Temperature: 20 °C
Position: none
Bias voltage: none     
   
Annealing:  
Date: 27. Jul 2019
Temperature: 80 °C
Duration: 48 h
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 150: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 200: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 100: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 150: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 200: T = +20 °C: none     T = -25 °C: none
Break-through voltage: T = +20 °C: none     T = -25 °C: none
   
Notes:


Version history

Time Author Change comment
05. Feb 2021 11:14:19 CET jreher Updated box and position via API.
11. Aug 2020 17:36:33 CEST jreher Updated APD characteristics via API.
27. Nov 2019 20:04:41 CET jreher Updated APD location via API.
25. Nov 2019 17:26:43 CET jreher Updated box and position via API.
13. Aug 2019 14:47:11 CEST spankonin Updated APD batch assignment via API.
08. Aug 2019 11:48:23 CEST markus.moritz
22. Jun 2016 15:29:38 CEST Tobias Imported from Hamamatsu datasheet.