RUB » Physics » The Faculty » Chairs and Working Groups » EP1 » PANDA FEMC Production Database

Show Hamamatsu Avalanche Photo Diode 4120041716 - Archived data from Mon, 10. May 2021 15:40:59 CEST


This is all the information about APD 4120041716. If it is wrong, edit the data.

Subdetector specification:  
Serial: 4120041716
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: Bochum
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: E10
Break-through voltage: 409 V
Voltage for Gain 100 (T=+25°C): 380.5 V
Dark current: 7.4 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 465
Position in Box: 45
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 150: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 200: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 100: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 150: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 200: T = +20 °C: none     T = -25 °C: none
Break-through voltage: T = +20 °C: none     T = -25 °C: none
   
Notes:


Version history

Time Author Change comment
24. Jan 2022 10:58:18 CET oafedulidis Updated APD batch assignment via API.
10. May 2021 15:40:59 CEST oafedulidis Updated APD location via API.
10. May 2021 15:40:45 CEST oafedulidis Updated box and position via API.
20. Apr 2021 12:33:12 CEST Tobias Imported from Hamamatsu datasheet.