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Show Hamamatsu Avalanche Photo Diode 4017040212 - Archived data from Mon, 19. April 2021 15:18:01 CEST


This is all the information about APD 4017040212. If it is wrong, edit the data.

Subdetector specification:  
Serial: 4017040212
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: In transit from Hamamatsu to Bochum
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: G08
Break-through voltage: 437 V
Voltage for Gain 100 (T=+25°C): 409.9 V
Dark current: 12 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 443
Position in Box: 19
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 150: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 200: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 100: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 150: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 200: T = +20 °C: none     T = -25 °C: none
Break-through voltage: T = +20 °C: none     T = -25 °C: none
   
Notes:


Version history

Time Author Change comment
28. Apr 2021 14:00:04 CEST oafedulidis Updated APD batch assignment via API.
19. Apr 2021 15:18:14 CEST oafedulidis Updated APD location via API.
19. Apr 2021 15:18:01 CEST oafedulidis Updated box and position via API.
31. Mar 2021 14:38:52 CEST Tobias Imported from Hamamatsu datasheet.