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Show Hamamatsu Avalanche Photo Diode 4016040119 - Archived data from Wed, 31. March 2021 14:38:45 CEST


This is all the information about APD 4016040119. If it is wrong, edit the data.

Subdetector specification:  
Serial: 4016040119
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: In transit from Hamamatsu to Bochum
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: F10
Break-through voltage: 436 V
Voltage for Gain 100 (T=+25°C): 409.1 V
Dark current: 10.5 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 442
Position in Box: 3
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 150: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 200: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 100: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 150: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 200: T = +20 °C: none     T = -25 °C: none
Break-through voltage: T = +20 °C: none     T = -25 °C: none
   
Notes:


Version history

Time Author Change comment
26. Apr 2021 16:39:29 CEST oafedulidis Updated APD batch assignment via API.
19. Apr 2021 15:17:51 CEST oafedulidis Updated APD location via API.
19. Apr 2021 15:17:38 CEST oafedulidis Updated box and position via API.
31. Mar 2021 14:38:45 CEST Tobias Imported from Hamamatsu datasheet.