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Show Hamamatsu Avalanche Photo Diode 0810007976 - Archived data from Wed, 22. June 2016 15:26:14 CEST


This is all the information about APD 0810007976. If it is wrong, edit the data.

Subdetector specification:  
Serial: 0810007976
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: unknown
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: C14
Break-through voltage: 417 V
Voltage for Gain 100 (T=+25°C): 389.5 V
Dark current: 3.5 nA
   
Screening Logistics:  
Available: Yes
Storage Box: none
Position in Box: none
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 150: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 200: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 100: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 150: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 200: T = +20 °C: none     T = -25 °C: none
Break-through voltage: T = +20 °C: none     T = -25 °C: none
   
Notes:


Version history

Time Author Change comment
23. Aug 2017 15:55:38 CEST markus.moritz Entered shipped after irradiation date.
10. Aug 2017 16:43:53 CEST hans-georg.zaunick Entered irradiation information.
07. Aug 2017 17:01:09 CEST hans-georg.zaunick Entered arrival for irradiation date.
04. Aug 2017 03:15:29 CEST Tobias Assigned to grid via information extracted from APD DB.
22. Jun 2016 15:26:14 CEST Tobias Imported from Hamamatsu datasheet.