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Show Hamamatsu Avalanche Photo Diode 0804007494 - Archived data from Mon, 07. August 2017 16:51:02 CEST


This is all the information about APD 0804007494. If it is wrong, edit the data.

Subdetector specification:  
Serial: 0804007494
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: unknown
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: F13
Break-through voltage: 422 V
Voltage for Gain 100 (T=+25°C): 394 V
Dark current: 4.9 nA
   
Screening Logistics:  
Available: Yes
Storage Box: none
Position in Box: none
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: 81
Position in grid: 1
Arrival for irradiation: 31. Jul 2017
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 150: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 200: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 100: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 150: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 200: T = +20 °C: none     T = -25 °C: none
Break-through voltage: T = +20 °C: none     T = -25 °C: none
   
Notes:


Version history

Time Author Change comment
08. Dec 2017 11:10:17 CET yannik.bettner Entered irradiation information.
07. Aug 2017 16:56:29 CEST hans-georg.zaunick Entered arrival for irradiation date.
07. Aug 2017 16:51:02 CEST hans-georg.zaunick Entered arrival for irradiation date.
04. Aug 2017 03:15:17 CEST Tobias Assigned to grid via information extracted from APD DB.
22. Jun 2016 15:24:30 CEST Tobias Imported from Hamamatsu datasheet.