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Show Hamamatsu Avalanche Photo Diode 0802007331 - Archived data from Wed, 22. June 2016 15:22:34 CEST


This is all the information about APD 0802007331. If it is wrong, edit the data.

Subdetector specification:  
Serial: 0802007331
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: unknown
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: G09
Break-through voltage: 419 V
Voltage for Gain 100 (T=+25°C): 390.8 V
Dark current: 3.3 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 182
Position in Box: 21
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 150: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 200: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 100: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 150: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 200: T = +20 °C: none     T = -25 °C: none
Break-through voltage: T = +20 °C: none     T = -25 °C: none
   
Notes:


Version history

Time Author Change comment
05. Feb 2021 11:11:47 CET jreher Updated box and position via API.
11. Aug 2020 17:30:05 CEST jreher Updated APD characteristics via API.
27. Nov 2019 20:01:12 CET jreher Updated APD location via API.
25. Nov 2019 17:25:13 CET jreher Updated box and position via API.
13. Aug 2019 12:19:54 CEST jreher Updated APD location via API.
22. Jul 2019 10:51:42 CEST spankonin Updated APD batch assignment via API.
10. Jul 2019 12:18:35 CEST markus.moritz
22. Jun 2016 15:22:34 CEST Tobias Imported from Hamamatsu datasheet.